Dahua 512GB NVMe M.2 PCIe Gen 3.0×4 2242 SSD (DHI-SSD-C900VND512G)
The Dahua 512GB NVMe M.2 2242 SSD is a high-performance internal storage solution designed for compact and space-constrained systems such as ultrabooks, mini PCs, embedded platforms, and handheld gaming devices. Powered by a PCIe Gen 3.0 x4 NVMe interface and advanced 3D NAND flash, this SSD delivers fast data access, reduced boot times, and smooth application performance while maintaining low power consumption and long-term reliability.
Product Features
High-Speed NVMe PCIe Performance
Utilizing a PCIe Gen 3.0 x4 interface with NVMe 1.3 and 1.4 protocol support, the SSD achieves sequential read speeds of up to 3,400 MB/s and write speeds of up to 3,000 MB/s, significantly improving system responsiveness compared to SATA-based drives.
Space-Saving M.2 2242 Form Factor
The compact M.2 2242 design makes this SSD ideal for devices that cannot accommodate standard M.2 2280 drives, offering a powerful storage upgrade for ultrabooks, mini PCs, and embedded systems with limited internal space.
Advanced 3D NAND with LDPC ECC
Built with high-quality 3D NAND flash and LDPC error correction technology, the drive enhances data reliability, endurance, and consistent performance throughout its operational life.
Optimized Performance and Longevity
Support for S.M.A.R.T. monitoring, TRIM commands, and automatic garbage collection ensures efficient data management, sustained speed, and extended SSD lifespan.
Efficient Power Consumption
Designed for low power operation, the SSD helps reduce heat output and extend battery life in portable devices such as laptops and ultrabooks.
Durable Solid-State Design
With no moving parts, the SSD offers strong resistance to shock and vibration, ensuring quiet operation and improved durability in mobile and compact environments.
Product Specifications
- Model: Dahua DHI-SSD-C900VND512G
- Capacity: 512 GB
- Form Factor: M.2 2242
- Dimensions: 22 mm × 42 mm
- Interface: PCIe Gen 3.0 x4, NVMe 1.3 / 1.4 compliant
- NAND Flash Type: 3D NAND with LDPC ECC
- Sequential Read Speed: Up to 3,400 MB/s
- Sequential Write Speed: Up to 3,000 MB/s
- Random Read (4K): Up to 160,000 IOPS
- Random Write (4K): Up to 200,000 IOPS
- MTBF: 1,500,000 hours
- Endurance: 256 TB to 300 TB TBW
- Power Consumption: Approx. 3.52 W (max), 1.19 W (idle)
- Operating Temperature: 0°C to 70°C
- Storage Temperature: –40°C to 85°C
- Shock Resistance: 1,500 G / 0.5 ms
- Humidity: 5% to 95% non-condensing
- Features: S.M.A.R.T., TRIM, garbage collection, LDPC ECC, SLC caching, intelligent temperature control




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